MJB5742T4G ON Semiconductor, MJB5742T4G Datasheet - Page 5

• Manufacturer Part Number: MJB5742T4G
• Description: TRANS PWR BIP NPN D2PAK
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MJB5742T4G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 400mA, 8A
• Current - Collector Cutoff (max): -
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 4A, 5V
• Power - Max: 2W
• Frequency - Transition: -
• Mounting Type: *
• Package / Case: *
• Rohs Compliant: YES
• Transistor Polarity: NPN
• Power Dissipation Pd: 2W
• Dc Collector Current: 8A
• Dc Current Gain Hfe: 200
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: TO-263
• No. Of Pins: 3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
0.05
0.02
0.07
0.05
0.03
0.02
0.5
0.3
0.1
0.7
0.5
0.3
0.2
0.1
16
10
8
3
1
1
0.2
5
CURVES APPLY BELOW RATED V
Figure 6. Forward Bias Safe Operating Area
0.3
t
d
C
10
V
t
r
CE
≥ 25_C. Second breakdown limitations do
0.5 0.7 1
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
Figure 8. Turn−On Time
, COLLECTOR CURRENT (AMPS)
20
5 ms
50
2
CEO
SAFE OPERATING AREA INFORMATION
3
C
RESISTIVE SWITCHING PERFORMANCE
100
dc
= 25_C; T
MJB5742
5
100 ms
V
I
I
B1
C
7
CC
200
/I
1 ms
B
10 ms
= I
C
= 250 V
= 20
10
B2
J(pk)
http://onsemi.com
− V
400
CE
is
5
REVERSE BIAS
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
0.7
0.5
0.3
0.2
For inductive loads, high voltage and high current must be
16
14
12
10
10
8
6
4
2
0
7
5
3
2
1
0.2
0
Figure 7. Reverse Bias Safe Operating Area
V
T
0.3
J
BE(off)
= 100°C
V
≤ 5 V
CE
100
0.5 0.7
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
Figure 9. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
1
200
t
t
s
f
2
300
3
5
7
400
V
I
I
B1
C
CC
/I
B
= I
10
= 250 V
= 20
B2
500