NSM46211DW6T1G ON Semiconductor, NSM46211DW6T1G Datasheet - Page 3

• Manufacturer Part Number: NSM46211DW6T1G
• Description: TRANS NPN/NPN MONO BIAS SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NSM46211DW6T1G

• Transistor Type: 1 NPN Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V, 65V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V / 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS - Q2 (NPN BRT)
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
(V
(V
(V
(I
(I
(V
(I
(V
(V
C
C
C
CB
CE
EB
CE
CC
CC
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 6.0 V, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
E
E
B
C
B
C
B
= 0)
B
B
= 0)
= 0)
= 5.0 mA)
= 0.3 mA)
= 0)
= 0)
= 2.5 V, R
= 0.5 V, R
Characteristic
L
L
= 1.0 kW)
= 1.0 kW)
NSM46211DW6T1G
http://onsemi.com
(T
A
= 25°C unless otherwise noted)
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
R
I
I
CE(sat)
I
V
V
CBO
CEO
EBO
h
R
1
FE
OL
OH
/R
1
2
Min
4.9
7.0
0.8
50
50
35
-
-
-
-
-
Typ
1.0
60
10
-
-
-
-
-
-
-
-
Max
0.25
100
500
0.5
0.2
1.2
13
-
-
-
-
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW