NSM21356DW6T1G ON Semiconductor, NSM21356DW6T1G Datasheet - Page 3

• Manufacturer Part Number: NSM21356DW6T1G
• Description: TRANS PNP/NPN MONO BIAS SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NSM21356DW6T1G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V, 65V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 220 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: -
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS - Q2 PNP
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter On Voltage
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
C
C
C
C
= -1.0 mA)
= -10 mA)
= -10 mA, V
= -10 mA)
= -10 mA, V
= -2.0 mA, V
= -10 mA, I
= -100 mA, I
= -10 mA, I
= -100 mA, I
= -2.0 mA, V
= -10 mA, V
B
B
EB
CE
CE
B
B
CE
CE
= -0.5 mA)
= -0.5 mA)
= -5.0 mA)
= -5.0 mA)
= 0)
= -5.0 V)
= -5.0 V)
= -5.0 V)
= -5.0 V)
(V
CB
CB
Characteristic
= -30 V)
= -30 V, T
300
250
200
150
100
50
0
- 50
A
= 150°C)
T
A
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
(T
NSM21356DW6T1G
A
R
http://onsemi.com
= 25°C unless otherwise noted)
qJA
= 833°C/W
50
3
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
100
CE(sat)
BE(sat)
I
BE(on)
CBO
h
FE
150
-5.0
-0.6
Min
-65
-80
-80
220
-
-
-
-
-
-
-
-
-0.7
-0.9
Typ
150
290
-
-
-
-
-
-
-
-
-
-
-0.65
-0.75
-0.82
Max
-4.0
-0.3
-15
475
-
-
-
-
-
-
-
Unit
nA
mA
V
V
V
V
V
V
V
-