NTD4970N-1G ON Semiconductor, NTD4970N-1G Datasheet

NTD4970N-1G

Manufacturer Part Number

NTD4970N-1G

Description

MOSFET N-CH 30V 38A DPAK

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTD4970NT4G.pdf (7 pages)

Specifications of NTD4970N-1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

11 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.5A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

8.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

774pF @ 15V

Power - Max

1.38W

Mounting Type

Package / Case

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

21 mOhms

Forward Transconductance Gfs (max / Min)

34 S

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

11.6 A

Power Dissipation

2.55 W

Mounting Style

SMD/SMT

Fall Time

5.7 ns

Gate Charge Qg

8.2 nC

Rise Time

27.6 ns

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4970N-1G

Manufacturer:

Quantity:

12 500

Current page: 1 of 7
Download datasheet (118Kb)

NTD4970N

Power MOSFET

30 V, 36 A, Single N−Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

June, 2011 − Rev. 0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Three Package Variations for Design Flexibility

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

qJA

qJC

= 15 A

(Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 25°C, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 24 V, V

= 25 W)

= 25°C unless otherwise stated)

= 100°C

= 25°C

= 10 V,

Symbol

DmaxPkg

dV/dt

EAS

STG

DSS

−55 to

Value

+175

11.6

2.55

1.38

24.6

±20

130

260

8.2

8.5

6.0

V/ns

Unit

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

CASE 369AA

1 2

(Bent Lead)

Drain

Drain 3

STYLE 2

(BR)DSS

30 V

DPAK

Source

ORDERING INFORMATION

4970N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

N−CHANNEL MOSFET

http://onsemi.com

Gate

(Straight Lead)

21 mW @ 4.5 V

11 mW @ 10 V

CASE 369AC

= Year

= Work Week

= Pb−Free Package

DS(ON)

Drain

3 IPAK

2 3

Publication Order Number:

Source

MAX

Gate

(Straight Lead

CASE 369D

NTD4970N/D

Drain

DPAK)

Drain

IPAK

36 A

MAX

Source

Related parts for NTD4970N-1G

NTD4970N-1G Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4970N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD4970N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. Surface−mounted on FR4 board using the ...

Page 3

... Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils. ORDERING INFORMATION Device NTD4970NT4G NTD4970N−1G NTD4970N−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise specified) J ...

Page 4

TYPICAL PERFORMANCE CURVES thru 4 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics ...

Page 5

C iss 800 700 600 500 400 C oss 300 200 100 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4970N/D ...

Related keywords

NTD4970N-1G datasheet
NTD4970N-1G data sheet
NTD4970N-1G pdf datasheet
NTD4970N-1G component
NTD4970N-1G part
NTD4970N-1G distributor
NTD4970N-1G RoHS
NTD4970N-1G datasheet download