NTMS4916NR2G ON Semiconductor, NTMS4916NR2G Datasheet

NTMS4916NR2G

Manufacturer Part Number

NTMS4916NR2G

Description

MOSFET N-CH 30V 11.4A SO8 FL

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMS4916NR2G.pdf (5 pages)

Specifications of NTMS4916NR2G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

7.8A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 4.5V

Input Capacitance (ciss) @ Vds

1376pF @ 25V

Power - Max

890mW

Mounting Type

Package / Case

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMS4916NR2G

Manufacturer:

ON Semiconductor

Quantity:

324

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMS4916NR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTMS4916NR2G

Quantity:

185

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NTMS4916N

Power MOSFET

30 V, 11.6 A, N−Channel, SO−8

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surfacemounted on FR4 board using the minimum recommended pad size.

April, 2010 − Rev. 0

MAXIMUM RATINGS

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

Power Dissipation R

(Note 1)

Continuous Drain

Current R

Power Dissipation R

(Note 2)

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche Energy

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Foot (Drain)

Junction−to−Ambient – Steady State (Note 2)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Optimized for 5 V, 12 V Gate Drives

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

DC−DC Converters

Printers

qJA

= 9 A

= 25°C, V

, t v 10 s(Note 1)

DS(on)

, L = 1.0 mH, R

qJA

, t v 10 s

(Note 1)

(Note 2)

to Minimize Conduction Losses

= 30 V, V

Parameter

qJA

= 25 W)

Steady

State

= 25°C unless otherwise stated)

= 10 V,

= 25°C, t

= 10 ms

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Symbol

qJA

qJF

qJA

DSS

stg

Value

−55 to

Value

24.5

141

1.30

0.89

11.6

1.98

40.5

±20

145

150

260

9.4

7.5

7.8

6.2

9.3

2.5

°C/W

Unit

°C

†For information on tape and reel specifications,

NTMS4916NR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 751

STYLE 12

(BR)DSS

Device

30 V

(Note: Microdot may be in either location)

SO−8

ORDERING INFORMATION

4916N = Device Code

http://onsemi.com

12 mW @ 4.5 V

9 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package

DS(ON)

(Pb−Free)

Source

Package

SO−8

N−Channel

Gate

MARKING DIAGRAM/

Publication Order Number:

PIN ASSIGNMENT

MAX

Top View

2500/Tape & Reel

Shipping

NTMS4916N/D

11.6 A

MAX

Drain

†

Related parts for NTMS4916NR2G

NTMS4916NR2G Summary of contents

Page 1

... I 2 (Note: Microdot may be in either location 260 °C Device L NTMS4916NR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Symbol Value Unit °C qJA R 63 qJA R 24 ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...

Page 3

3 2 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 ...

Page 4

C iss 1400 1300 1200 1100 1000 900 800 700 600 500 C oss 400 300 C rss 200 100 DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 V ...

Page 5

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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