NTTFS4929NTAG ON Semiconductor, NTTFS4929NTAG Datasheet - Page 2

• Manufacturer Part Number: NTTFS4929NTAG
• Description: MOSFET N-CH 30V 34A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4929NTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 810mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 2.11 W
• Mounting Style: SMD/SMT
• Fall Time: 6.1 ns
• Gate Charge Qg: 8.8 nC
• Rise Time: 24 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 6)
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
V
Parameter
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
(BR)DSS
J
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
DS(on)
C
C
g
d(on)
d(off)
DSS
GSS
G(TH)
= 25°C unless otherwise specified)
FS
oss
t
t
rss
GS
GD
iss
r
f
/T
/T
J
J
V
V
V
GS
http://onsemi.com
GS
GS
V
= 0 V, f = 1.0 MHz, V
V
V
V
V
= 4.5 V, V
= 10 V, V
V
V
GS
V
DS
GS
GS
GS
V
I
DS
GS
D
GS
DS
= 4.5 V
= 15 A, R
= 24 V
Test Condition
= 10 V
= 4.5 V, V
= 0 V,
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
2
DS
DS
DS
, I
= 15 V, I
D
= 15 V, I
GS
D
G
DS
= 250 mA
D
= 250 mA
= 3.0 W
= ±20 V
= 15 A
= 15 V,
T
T
DS
I
I
D
J
D
D
I
D
I
J
D
D
= 125°C
= 20 A
= 25°C
= 10 A
= 10 A
= 20 A
= 15 V
= 8 A
= 8 A
2
, 1 oz. Cu).
Min
1.2
30
Symbol
R
R
R
R
qJC
qJA
qJA
qJA
12.7
12.7
16.3
Typ
920
337
175
1.6
4.3
8.8
8.8
8.8
3.1
2.8
4.4
9.6
6.1
24
26
24
14
Value
59.2
32.6
155
5.6
±100
Max
1.0
2.2
10
11
17
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
nA
pF
nC
nC
ns
V
V
S