NTTFS4929NTWG ON Semiconductor, NTTFS4929NTWG Datasheet - Page 5
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NTTFS4929NTWG
Manufacturer Part Number
NTTFS4929NTWG
Description
MOSFET N-CH 30V 34A 8WDFN
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.NTTFS4929NTWG.pdf
(7 pages)
Specifications of NTTFS4929NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
810mW
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
10.6 A
Power Dissipation
2.11 W
Mounting Style
SMD/SMT
Fall Time
6.1 ns
Gate Charge Qg
8.8 nC
Rise Time
24 ns
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1000
1400
1200
1000
100
800
600
400
200
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
10
1
1
0
−50
0
1
Figure 9. Resistive Switching Time Variation
V
V
I
I
V
D
D
GS
DD
GS
= 15 A
Figure 5. On−Resistance Variation with
= 20 A
−25
C
C
C
= 10 V
= 4.5 V
= 10 V
V
oss
rss
iss
5
DS
Figure 7. Capacitance Variation
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
10
25
Temperature
50
15
10
75
20
TYPICAL CHARACTERISTICS
t
100
d(off)
T
V
J
GS
= 25°C
25
http://onsemi.com
= 0 V
125
t
t
t
r
f
d(on)
150
30
100
5
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
11
10
30
25
20
15
10
1
9
8
7
6
5
4
3
2
0
5
0
0.1
10
0
Figure 10. Diode Forward Voltage vs. Current
V
Figure 6. Drain−to−Source Leakage Current
Q
GS
Drain−to−Source Voltage vs. Total Charge
V
T
0.2
gs
GS
J
= 0 V
2
= 25°C
V
V
= 0 V
SD
DS
0.3
Figure 8. Gate−to−Source and
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
4
Q
0.4
gd
15
6
0.5
vs. Voltage
Q
T
0.6
8
0.7
10
20
0.8
T
T
T
J
J
J
12
= 125°C
= 150°C
= 25°C
V
V
I
D
T
0.9
GS
DD
J
= 20 A
= 25°C
= 10 V
= 15 V
14
1.0
1.1
25
16