NTTFS4930NTAG ON Semiconductor, NTTFS4930NTAG Datasheet - Page 4
![MOSFET N-CH 30V 23A 8WDFN](/photos/30/99/309910/wdfn-8_sml.jpg)
NTTFS4930NTAG
Manufacturer Part Number
NTTFS4930NTAG
Description
MOSFET N-CH 30V 23A 8WDFN
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.NTTFS4930NTWG.pdf
(7 pages)
Specifications of NTTFS4930NTAG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
476pF @ 15V
Power - Max
790mW
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
7.2 A
Power Dissipation
2.06 W
Mounting Style
SMD/SMT
Fall Time
3.6 ns
Gate Charge Qg
5.5 nC
Rise Time
26.6 ns
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTTFS4930NTAG
Manufacturer:
ON Semiconductor
Quantity:
3 650
Part Number:
NTTFS4930NTAG
Manufacturer:
ON/安森美
Quantity:
20 000
50
40
30
20
10
0
0
8.5 V
10 V
0.5
Figure 1. On−Region Characteristics
V
DS
1
, DRAIN−TO−SOURCE VOLTAGE (V)
6.5 V
1.5
2
3.8E−02
3.4E−02
3.0E−02
2.6E−02
2.2E−02
1.8E−02
1.4E−02
1.0E−02
0.0340
0.0300
0.0260
0.0220
0.0180
0.0140
0.0100
2.5
3.0
5
3
Figure 4. On−Resistance vs. Drain Current and
4.4 V
T = 25°C
3.5
4.0
TYPICAL CHARACTERISTICS
Figure 3. On−Resistance vs. V
10
V
4
T
GS
J
4.5 V
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
= 25°C
5.0
4 V
I
= 2.6 V
D
4.5
, DRAIN CURRENT (A)
http://onsemi.com
Gate Voltage
15
V
V
6.0
5
GS
GS
V
GS
= 4.5 V
= 10 V
4
(V)
7.0
20
40
30
20
10
0
1
8.0
V
DS
1.5
GS
= 10 V
T
25
T
I
V
D
J
Figure 2. Transfer Characteristics
J
GS
= 25°C
= 10 A
9.0
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
2
T
10.0
J
30
= 125°C
2.5
T
3
J
= −55°C
3.5
4
4.5
5