RDD020N60TL Rohm Semiconductor, RDD020N60TL Datasheet

RDD020N60TL

Manufacturer Part Number

RDD020N60TL

Description

MOSFET N-CH 600V 2A CPT3

Manufacturer

Rohm Semiconductor

Series

-r

Datasheet

1.RDD020N60TL.pdf (1 pages)

Specifications of RDD020N60TL

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

Gate Charge (qg) @ Vgs

Input Capacitance (ciss) @ Vds

Power - Max

20W

Mounting Type

Package / Case

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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RDD020N60 | MOSFETs | Transistors | Discrete Semiconductors | ROHM CO., LTD.

http://www.rohm.com/products/discrete/transistor/mosfet/rdd020n60/print.html

[ Product description ]

Power MOSFETs are made as low ON-resistance devices by the micro-

processing technologies useful for wide range of applications.Broad lineup

covering compact types, high-power types and complex types to meet various

needs in the market.

E10V-drive type Nch Power MOSFET

Drain-Source voltage

Gate-Source voltage

Drain current

(continuous) I

Source current(body

Di) I

Total power dissipation

Channel temperature

Tch(ºC)

Storage temperature

Tstg(ºC)

10V Drive Nch MOSFET

RDD020N60

DSS

GSS

Features

Product specifications

Rated parameters

(W)

(V)

(A)

(V)

(A)

Absolute maximum ratings (Ta=25ºC)

-55 to +150

Standard

value

±2.0

600

±30

150

20 Tc=25ºC

Limited only by maximum channel

temperature allowed

Conditions

*The contents described here are just outline for introduction.

Please obtain the specification sheets from us for thorough check before use.

Outline

CPT3/SC-63/SOT-428

@ROHM/JEDEC/JEITA

Dimensions

* Click to enlarge.

Equivalent circuit diagram

Page 1 of 1

6/20/2011

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