RRR015P03TL Rohm Semiconductor, RRR015P03TL Datasheet - Page 4

• Manufacturer Part Number: RRR015P03TL
• Description: MOSFET P-CH 30V 1.5A TSMT3
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of RRR015P03TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 1W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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RRR015P03
1000
100
500
400
300
200
100
10
0
0.01
0
Fig.10 Static Drain-Source On-State
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Fig.13 Typical Capacitance
0.1
Resistance vs. Gate Source Voltage
Crss
5
vs. Drain-Source Voltage
Ciss
I
D
Coss
= 1.5A
1
I
D
=0.7A
10
10
T
Pulsed
T
f=1MHz
V
a
a
GS
=25°C
=25°C
=0V
GS
DS
[V]
100
15
[V]
1000
100
10
1
0.01
t
d(on)
t
d(off)
Fig.11 Switching Characteristics
DRAIN-CURRENT : I
0.1
4/5
t
f
t
r
1
T
V
V
R
Pulsed
a
DD
GS
G
=25°C
=10Ω
=15V
=10V
D
[A]
10
10
8
6
4
2
0
0
Fig.12 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
1
2
3
4
2010.07 - Rev.A
T
V
I
R
Pulsed
D
a
DD
= 1.5A
G
5
=25°C
=10Ω
= 15V
Data Sheet
6
7