RUM002N05T2L Rohm Semiconductor, RUM002N05T2L Datasheet - Page 4

• Manufacturer Part Number: RUM002N05T2L
• Description: MOSFET N-CH 50V 0.2A 3VMT
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of RUM002N05T2L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: -
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 150mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

○
RUM002N05
c
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1000
0.1
100
10
1
0.001
1
0.01
V
Pulsed
Fig.10 Forward Transfer Admittance
DS
Ta= -25°C
Ta=125°C
Fig.13 Switching Characteristics
t
t
Ta=25°C
Ta=75°C
d(off)
r
= 10V
t
d(on)
DRAIN-CURRENT : I
DRAIN-CURRENT : I
vs. Drain Current
0.01
t
f
0.1
0.1
Ta=25°C
V
V
R
Pulsed
DD
GS
G
D
D
=10
[A]
[A]
=4.5V
=30V
1
1
1000
0.01
100
0.1
0.1
10
1
1
0.01
0
V
Pulsed
Ta=25°C
f=1MHz
V
DRAIN-SOURCE VOLTAGE : V
SOURCE-DRAIN VOLTAGE : V
GS
GS
Fig.11 Reverse Drain Current
Fig.14 Typical Capacitance
=0V
=0V
C
0.1
rss
vs. Sourse-Drain Voltage
0.5
vs. Drain-Source Voltage
1
C
oss
4/5
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
C
iss
DS
SD
100
[V]
1.5
[V]
10
9
8
7
6
5
4
3
2
1
0
0
Fig.12 Static Drain-Source On-State
GATE-SOURCE VOLTAGE : V
I
D
Resistance vs. Gate Source Voltage
= 20mA
I
D
=200mA
5
Ta=25°C
Pulsed
2010.02 - Rev.A
GS
[V]
10
Data Sheet