MT46V256M4P-6T:ATR Micron Technology Inc, MT46V256M4P-6T:ATR Datasheet - Page 58

• Manufacturer Part Number: MT46V256M4P-6T:ATR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V256M4P-6T:ATR

• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 230mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 30:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
READ-to-WRITE
Notes:
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DM
DM
DM
DQ
DQ
DQ
CK
CK
CK
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
Bank a,
READ
READ
Bank,
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
1
1
1
t
AC,
CL = 3
t
DQSCK, and
58
NOP
NOP
NOP
T2
T2
T2
DO
n
T2n
T2n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
DO
n
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
t
(NOM)
DQSS
DO
n
1Gb: x4, x8, x16 DDR SDRAM
T3n
T3n
Transitioning Data
WRITE
Bank,
Col b
WRITE
T4
T4
T4
NOP
DI
b
t
(NOM)
DQSS
©2003 Micron Technology, Inc. All rights reserved.
t
(NOM)
DQSS
T4n
T5
T5
T5
NOP
DI
DI
NOP
NOP
b
b
Operations
Don’t Care
T5n
T5n
T5n