MT9JSF12872AZ-1G4G1 Micron Technology Inc, MT9JSF12872AZ-1G4G1 Datasheet - Page 11

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MT9JSF12872AZ-1G4G1

Manufacturer Part Number
MT9JSF12872AZ-1G4G1
Description
MODULE DDR3 SDRAM 1GB 240UDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT9JSF12872AZ-1G4G1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
1Gb
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
4.41A
Number Of Elements
9
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Memory Type
DDR3 SDRAM
Memory Size
1GB
Speed
1333MT/s
Features
-
Package / Case
240-UDIMM
Lead Free Status / Rohs Status
Supplier Unconfirmed
Electrical Specifications
Table 9: Absolute Maximum Ratings
Table 10: Operating Conditions
PDF: 09005aef8360c8e6
jsf9c128_256_512x72az.pdf - Rev. C 9/09 EN
Symbol Parameter
I
V
I
V
VREF
I
VTT
T
T
OZ
DD
I
TT
V
I
A
C
Symbol
IN
V
, V
DD
V
Termination reference current from V
Termination reference voltage (DC) – com-
mand/address bus
Input leakage current;
Any input 0V ≤ V
V
(All other pins not under test
= 0V)
Output leakage current;
0V ≤ V
ODT are disabled; ODT is HIGH
V
or V
test = 0V)
Module ambient operating
temperature
DDR3 SDRAM component case
operating temperature
OUT
DD
REF
REF
REFCA
supply voltage
input 0V ≤ V
supply leakage current; V
OUT
Parameter
V
Voltage on any pin relative to V
= V
≤ V
DD
Notes:
DD
supply voltage relative to V
DDQ
/2 (All other pins not under
IN
IN
; DQ and
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device’s data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
≤ V
≤ 0.95V
1. V
2. T
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,” avail-
4. The refresh rate is required to double when 85°C < T
DD
and address signals’ voltage margin and will reduce timing margins.
able on Micron’s Web site.
;
A
TT
1GB, 2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM UDIMM
and T
termination voltage in excess of the stated limit will adversely affect the command
REFDQ
Address in-
puts, RAS#,
CAS#, WE#,
BA, S#, CKE,
ODT, CK, CK#
DM
DQ, DQS,
DQS#
Commercial
Industrial
Commercial
Industrial
C
are simultaneous requirements.
= V
TT
DD
SS
SS
/2
0.49 × V
11
1.425
–600
Min
–18
–40
–40
–2
–5
–9
DD
0
0
- 20mV 0.5 × V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
–0.4
–0.4
Nom
1.5
0
0
0
0
DD
C
0.51 × V
Electrical Specifications
≤ 95°C.
+1.975
+1.975
Max
1.575
Max
+600
+18
+70
+85
+85
+95
©2008 Micron Technology, Inc. All rights reserved.
DD
+2
+5
+9
+ 20mV
Units Notes
mA
µA
µA
µA
°C
°C
°C
°C
V
V
Units
V
V
2, 3, 4
2, 3
1

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