LMH6704MA National Semiconductor, LMH6704MA Datasheet - Page 3

• Manufacturer Part Number: LMH6704MA
• Description: BUFFER, PROGRAMMABLE, 6704, SOIC8
• Manufacturer: National Semiconductor

Specifications of LMH6704MA

• No. Of Amplifiers: 1
• Gain Bandwidth: 650MHz
• Slew Rate: 3000V/µs
• Supply Voltage Range: ± 4V To ± 6V
• Output Current: 90mA
• Amplifier Output: Single Ended
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes

CMIR
PSRR
V
I
I
R
R
R
C
Enable/Disable Performance (Disabled Low)
T
T
V
V
I
I
I
O
S
IH
IL
OZ
Symbol
ON
OFF
Electrical Characteristics
O
IH
IL
F
OUT
IN+
IN+
T
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.
Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
Min/Max ratings are based on production testing unless otherwise specified.
Note 3: The maximum output current (I
Note 4: Human body model: 1.5 kΩ in series with 100 pF. Machine model: 0Ω in series with 200 pF.
Note 5: Slew Rate is the average of the rising and falling edges.
Note 6: Typical numbers are the most likely parametric norm. Bold numbers refer to over temperature limits.
Note 7: Negative current implies current flowing out of the device.
A
& R
= +25˚C , A
G
Common Mode Input Range
Power Supply Rejection Ratio
Output Voltage Swing
Linear Output Current
Supply Current (Enabled)
Supply Current (Disabled)
Internal R
Closed Loop Output Resistance
Input Resistance
Input Capacitance
Enable Time
Disable Time
Output Glitch
Enable Voltage
Disable Voltage
Disable Input Bias Current, High
Disable Input Bias Current, Low
Disabled Output Leakage
Current
V
= +2, V
J
= T
F
A
Parameter
and R
. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
S
=
G
±
5V, R
OUT
) is determined by device power dissipation limitations.
L
= 100Ω; unless specified.
(Note 2) (Continued)
V
DC
R
R
V
DIS = 2V, R
DIS = 0.8V, R
DC
DIS ≥ V
DIS ≤ V
DIS = V
DIS = 0V (Note 7)
A
IO
OUT
V
L
L
=
= 100Ω
= +1, V
≤ 15 mV
∞
≤ 80 mV
IH
IL
+
, (Note 7)
OUT
L
Conditions
=
L
=
=
∞
3
±
∞
1.8V
(Note 6)
±
±
±
±
±
Min
±
375
2.0
3.18
3.12
48
47
1.9
3.3
3.2
0
55
(Note 6)
−100
±
±
11.5
0.25
0.05
Typ
±
465
0.2
±
52
10
10
50
−1
3.5
3.5
1
1
90
2
(Note 6)
0.925
−350
Max
12.5
13.7
563
±
±
±
0.9
0.8
50
25
50
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Units
mV
J
mA
mA
MΩ
dB
pF
µA
µA
µA
ns
ns
>
Ω
Ω
V
V
V
PP
T
A
.