MTP12P10 ON Semiconductor, MTP12P10 Datasheet
MTP12P10
Specifications of MTP12P10
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MTP12P10 Summary of contents
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... MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain 4 TO−220AB CASE 221A MTP12P10G STYLE 5 AYWW Gate 2 Drain MTP12P10 = Device Code A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MTP12P10 TO−220AB 50 Units/Rail MTP12P10G TO−220AB 50 Units/Rail (Pb−Free) Preferred devices are recommended choices for future use and best overall value ...
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... Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. MTP12P10 (T = 25°C unless otherwise noted ...
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... V , GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 3. Transfer Characteristics 0 100°C J 0.4 0.3 25°C 0.2 −55°C 0 DRAIN CURRENT (AMPS) D Figure 5. On−Resistance versus Drain Current MTP12P10 1 −50 −25 Figure 2. Gate−Threshold Voltage Variation 1 0. 1 −50 −75 Figure 4. Normalized Breakdown Voltage 1 ...
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... The power averaged over a complete switching cycle must be less than: P (pk DUTY CYCLE 0 TIME (ms) Figure 9. Thermal Response http://onsemi.com 4 MTM/MTP12P06 MTM/MTP12P10 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 8. Maximum Rated Switching Safe Operating Area and the breakdown voltage − T J(max) C ...
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... C iss 800 C oss 400 C rss SOURCE−TO−DRAIN VOLTAGE (VOLTS) DS Figure 10. Capacitance Variation V in PULSE GENERATOR gen Figure 12. Switching Test Circuit MTP12P10 0 − 25° − MHz −6 −8 −10 −12 −14 − Figure 11. Gate Charge versus RESISTIVE SWITCHING d(on) ...
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... V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTP12P10/D ...