SI4810DY Vishay, SI4810DY Datasheet
SI4810DY
Manufacturer Part Number
SI4810DY
Description
MOSFET Power 30V 10A 2.5W
Manufacturer
Vishay
Specifications of SI4810DY
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0135 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4810DY
Manufacturer:
SANYO
Quantity:
3 000
Company:
Part Number:
SI4810DY
Manufacturer:
VIS
Quantity:
9 668
Company:
Part Number:
SI4810DY,N-MOS
Manufacturer:
TOSHIBA
Quantity:
1 000
Part Number:
SI4810DY-T1
Manufacturer:
SILICONIX
Quantity:
20 000
Company:
Part Number:
SI4810DY-T1-E3
Manufacturer:
VISHAY
Quantity:
50 000
Company:
Part Number:
SI4810DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4810DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4810DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70802
S-31062—Rev. F, 26-May-03
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient (t v 10 sec)
M
Maximum Junction to Ambient (t
Maximum Junction-to-Ambient (t = steady state)
V
V
Surface Mounted on FR4 Board.
t v 10 sec.
i
DS
DS
30
30
30
(V)
(V)
J
G
S
S
S
ti
N-Channel 30-V (D-S) MOSFET with Schottky Diode
Diode Forward Voltage
1
2
3
4
t A bi
0.0135 @ V
0.020 @ V
0.53 V @ 3.0 A
Top View
Parameter
r
J
J
SO-8
DS(on)
V
= 150_C) (MOSFET)
= 150_C) (MOSFET)
t (t
SD
GS
steady state)
GS
(V)
10
Parameter
(W)
= 4.5 V
= 10 V
a, b
a, b
a, b
a, b
8
7
6
5
)
a
a
D
D
D
D
a
a
a, b
a, b
Ordering Information:
Si4810DY
Si4810DY-T1 (with Tape and Reel)
a, b
I
I
D
F
10
4.0
8
A
(A)
(A)
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
T
T
Device
MOSFET
MOSFET
Schottky
Schottky
A
A
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
T
R
R
V
V
V
J
I
I
P
P
, T
DM
I
I
I
I
FM
thJA
DS
DS
GS
D
D
S
N-Channel MOSFET
F
D
D
stg
G
D
Typical
D
70
80
S
- 55 to 150
D
S
Limit
"20
Vishay Siliconix
2.5
1.6
2.0
1.3
30
30
10
50
2.3
4.0
50
D
8
S
Schottky Diode
Maximum
50
60
Si4810DY
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
V
V
A
A
2-1
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