SI3447DV-T1-E3 Vishay

SI3447DV-T1-E3

Manufacturer Part Number

SI3447DV-T1-E3

Description

MOSFET Power 12V 5.2A 2W

Manufacturer

Vishay

Specifications of SI3447DV-T1-E3

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.05 Ohms

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

+/- 5.2 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TSOP

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI3447DV-T1-E3

Manufacturer:

VISHAY

Quantity:

82 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI3447DV-T1-E3

Manufacturer:

VISHAY

Quantity:

3 123

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