IXFH6N100F IXYS

IXFH6N100F

Manufacturer Part Number

IXFH6N100F

Description

MOSFET Power HiPerRF Power Mosfet 1000V 6A

Manufacturer

IXYS

Specifications of IXFH6N100F

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.9 Ohms

Drain-source Breakdown Voltage

1000 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

6 A

Power Dissipation

180 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-247AD

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH6N100F

Manufacturer:

IXYS

Quantity:

15 500

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