IRFP254 IXYS, IRFP254 Datasheet
IRFP254
Manufacturer Part Number
IRFP254
Description
MOSFET Power 23 Amps 250V 0.14 Rds
Manufacturer
IXYS
Datasheet
1.IRFP254.pdf
(2 pages)
Specifications of IRFP254
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AD
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
23
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
2970
Qg, Typ, (nc)
106
Trr, Typ, (ns)
370
Pd, (w)
190
Rthjc, Max, (k/w)
0.65
Package Style
TO-247
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP254
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFP254A
Manufacturer:
SAMSUNG
Quantity:
194
Part Number:
IRFP254A
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
IRFP254N
Manufacturer:
IR
Quantity:
12 500
Standard Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
AR
GSS
D25
DSS
GS
GSM
AR
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
S
V
J
J
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
150 C, R
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
I
DM
, di/dt 100 A/ s, V
GS
, I
D
D
DC
D
= 250 A
= 250 A
DSS
G
, V
= 14 A
= 2
DS
= 0
GS
= 1 M
DD
T
T
J
J
(T
= 25 C
= 125 C
V
DSS
J
= 25 C, unless otherwise specified)
JM
,
min.
250
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
IRFP 254
typ.
1.13/10 Nm/lb.in.
250
250
190
150
300
20
30
23
92
23
19
5
6
max.
0.14
100
250
25
4
V/ns
mJ
nA
W
V
V
V
V
A
A
A
V
V
g
C
C
C
C
A
A
V
I
R
TO-247 AD
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
D (cont)
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controld
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= 250 V
= 23 A
= 0.14
HDMOS
D = Drain,
TAB = Drain
TM
process
92601E(5/96)
D (TAB)
1 - 2
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IRFP254 Summary of contents
Page 1
... GSS 0.8 • V DSS DS DSS DS(on Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IRFP 254 Maximum Ratings 250 = 1 M 250 DSS 190 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. ...
Page 2
... 0.65 0.24 Characteristic Values ( unless otherwise specified) J min. typ. max 1.8 = 100 V 370 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IRFP 254 TO-247 AD Outline Terminals Gate 2 - Drain ...