SI4927DY-T1-E3 Vishay, SI4927DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4927DY-T1-E3
• Description: MOSFET Power 30V 7.4A 2.5W
• Manufacturer: Vishay

Specifications of SI4927DY-T1-E3

• Configuration: Dual Common Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.4 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Si4927DY
Vishay Siliconix
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
b
Parameter
a
a
a
300 s, duty cycle
a
a
Symbol
2%.
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
t
SD
t
rr
fs
gs
gd
r
f
g
)
V
V
DS
I
I
V
D
DS
= –15 V, V
I
F
V
= –24 V, V
V
V
V
V
V
–1 A, V
V
V
V
DS
15 V V
= –2.1 A, di/dt = 100 A/ s
GS
I
1 A V
DS
GS
DS
DS
DS
S
DD
DD
Test Condition
= –2.1 A, V
= –4.5 V, I
= V
= –15 V, I
= 0 V, V
= –10 V, I
= –24 V, V
= –15 V, R
–5 V, V
GEN
GS
GS
15 V R
GS
, I
= –10 V, I
= –10 V, R
D
GS
,
= 0 V, T
GS
D
D
= –250 A
D
GS
10 V I
10 V R
GS
L
L
=
= –7.4 A
= –7.4 A
= –5.8 A
= –10 V
= 15
= 0 V
= 0 V
15
20 V
J
D
G
= 55 C
= –7.4 A
= 6
6
7 4 A
Min
–30
–1
0.022
0.034
–0.73
Typ
6.8
15
38
13
75
42
50
8
9
S-59519—Rev. B, 04-Sep-98
Document Number: 70808
Max
0.028
0.045
–1.2
–25
120
–1
60
25
20
70
90
100
Unit
nC
nA
ns
V
A
S
V
C
A
A