SIR640DP-T1-GE3 Vishay
SIR640DP-T1-GE3
Manufacturer Part Number
SIR640DP-T1-GE3
Description
MOSFET Power 40V 60A 104W 1.7mohm @ 10V
Manufacturer
Vishay
Specifications of SIR640DP-T1-GE3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0017 Ohms, 0.0022 Ohms
Forward Transconductance Gfs (max / Min)
110 S
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
36 A, 45 A, 60 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO-8
Gate Charge Qg
75 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR640DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000