SIA429DJT-T1-GE3 Vishay
SIA429DJT-T1-GE3
Manufacturer Part Number
SIA429DJT-T1-GE3
Description
MOSFET Power P-Channel 20 V (D-S)
Manufacturer
Vishay
Specifications of SIA429DJT-T1-GE3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0205 Ohms
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 12 A
Power Dissipation
19 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIA429DJT-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 385
Part Number:
SIA429DJT-T1-GE3
Manufacturer:
CJ/长电
Quantity:
20 000