SI4925DY-T1 Vishay

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SI4925DY-T1

Manufacturer Part Number

SI4925DY-T1

Description

MOSFET Power 30V 6.1A 2W

Manufacturer

Vishay

Specifications of SI4925DY-T1

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.045 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 4.7 A

Power Dissipation

1.1 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

No

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI4925DY-T1

Manufacturer:

SILICONIX

Quantity:

5 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI4925DY-T1

Manufacturer:

SILICONIX

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI4925DY-T1-E3

Manufacturer:

VISHAY

Quantity:

42 500

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI4925DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI4925DY-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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