MT47H32M16HR-25E IT:GTR Micron Technology Inc, MT47H32M16HR-25E IT:GTR Datasheet - Page 22

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MT47H32M16HR-25E IT:GTR

Manufacturer Part Number
MT47H32M16HR-25E IT:GTR
Description
Manufacturer
Micron Technology Inc

Specifications of MT47H32M16HR-25E IT:GTR

Lead Free Status / Rohs Status
Compliant
Table 7: Thermal Impedance (Continued)
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Die Revision
G
1
Package Substrate
60-ball
84-ball
Note:
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Airflow = 0m/s
Θ JA (°C/W)
94.2
76.4
88.8
71.4
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
22
Θ JA (°C/W)
76.5
66.9
71.3
62.1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W)
Θ JA (°C/W)
70.1
63.1
65.6
58.7
© 2004 Micron Technology, Inc. All rights reserved.
57.3
56.5
52.5
52.0
6.1
6.0

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