JANTX2N6788 International Rectifier, JANTX2N6788 Datasheet

JANTX2N6788

Manufacturer Part Number
JANTX2N6788
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of JANTX2N6788

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.345Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
6A
Power Dissipation
20W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-39
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
JANTX2N6788
Manufacturer:
CY
Quantity:
650
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-205AF)
Product Summary
For footnotes refer to the last page
Absolute Maximum Ratings
The HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRFF120
P D @ T C = 25°C
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
®
®
TRANSISTORS
technology is the key to International
B
100V
VDSS
R
0.30Ω
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
6.0A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
REF:MIL-PRF-19500/555
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
0.98 (typical)
100V, N-CHANNEL
-55 to 150
0.242
0.16
±20
6.0
3.5
2.2
2.0
5.5
24
20
JANTXV2N6788
JANTX2N6788
T0-39
IRFF120
PD-90426D
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
g
1

Related parts for JANTX2N6788

JANTX2N6788 Summary of contents

Page 1

... REF:MIL-PRF-19500/555 I D 6.0A Features: Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n 300 (0.063 in. (1.6mm) from case for 10s) PD-90426D IRFF120 JANTX2N6788 JANTXV2N6788 100V, N-CHANNEL T0-39 Units 6 0.16 W/°C ±20 V 0.242 mJ 2 ...

Page 2

... IRFF120, JANTX2N6788, JANTXV2N6788 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 50V 60µs PULSE WIDTH Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFF120, JANTX2N6788, JANTXV2N6788 100 10 1 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 150° Fig 4. Normalized On-Resistance VGS TOP 15V 10V 8.0V 7 ...

Page 4

... IRFF120, JANTX2N6788, JANTXV2N6788 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150°C 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 13 a & ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFF120, JANTX2N6788, JANTXV2N6788 V GS ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r Fig 10b. Switching Time Waveforms + - t t d(off ...

Page 6

... IRFF120, JANTX2N6788, JANTXV2N6788 D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 15V DRIVER + - (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit Vs ...

Page 7

... Case Outline and Dimensions — TO-205AF(Modified TO-39) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 www.irf.com IRFF120, JANTX2N6788, JANTXV2N6788 Â ≤ 6.0A, di/dt ≤ 110A/µ ≤ 100V ≤ 150°C Suggested RG =7.5 Ω ...

Related keywords