NE85633-T1B-A CALIFORNIA EASTERN LABS, NE85633-T1B-A Datasheet - Page 22
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NE85633-T1B-A
Manufacturer Part Number
NE85633-T1B-A
Description
Manufacturer
CALIFORNIA EASTERN LABS
Datasheet
1.NE85633-T1B-A.pdf
(26 pages)
Specifications of NE85633-T1B-A
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage
20V
Emitter-base Voltage
3V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
50
Power Dissipation
200mW
Frequency (max)
7GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
1. Collector
2. Emitter
3. Base
4. Emitter
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
2.0 ± 0.2
1.6 ± 0.1
0.75 ± 0.05
0.9 ± 0.1
1.0
(Chip Thickness: 140 to 160 μm)
0.65
0.60
0.5
BASE
0.6
0.4
0.3
0.2
PACKAGE OUTLINE 18
+0.10
PACKAGE OUTLINE 19
-0.05
+0.1
2
-
1
0
NE85600 (CHIP)
0.35
0.30
0.22
2
1
(SOT-343)
1.6 ± 0.1
0.8 ± 0.1
1.25 ± 0.1
2.1 ± 0.2
(Units in mm)
0 to 0.1
EMITTER
0.07φ
0 to 0.1
3
3
4
0.65
0.65
0.15
0.3
0.3
(LEADS 2, 3, 4)
LEAD 3 ONLY
+0.10
0.15
+0.10
-0.05
-0.05
+0.1
-0.05
1.3
.112
+0.10
-0.05
0.35
0.6
1.25
1
2
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
1
2
0.6
PACKAGE OUTLINE 19
PACKAGE OUTLINE 18
1.3
1.7
0.8
NE856 SERIES
3
3
4
0.5
0.6
1.0