SSTJ211-E3 Vishay, SSTJ211-E3 Datasheet - Page 4

• Manufacturer Part Number: SSTJ211-E3
• Description: TRANSISTOR,JFET,N-Channel,2mA,TO-236AB
• Manufacturer: Vishay

Specifications of SSTJ211-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 20mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Gate-source Cutoff Voltage: 45V

J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-4
10
10
10
8
6
4
2
0
8
6
4
2
0
8
6
4
2
0
0
0
0
Transconductance vs. Gate-Source Voltage
V
V
125_C
T
GS(off)
GS(off)
125_C
A
V
= –55_C
T
GS(off)
A
–0.4
–0.4
2
= –2 V
= –2 V
= –55_C
V
V
V
= –2 V
DS
Transfer Characteristics
GS
GS
Output Characteristics
25_C
– Drain-Source Voltage (V)
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
–0.8
–0.8
4
25_C
–1.2
–1.2
6
V
V
DS
V
f = 1 kHz
GS
DS
= 10 V
–1.6
–1.6
8
= 10 V
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
10
_
–2
–2
30
24
18
12
10
30
24
18
12
6
0
8
6
4
2
0
6
0
0
0
0
Transconductance vs. Gate-Source Voltage
V
f = 1 kHz
DS
25_C
= 10 V
–1
–1
V
125_C
2
GS(off)
V
Transfer Characteristics
V
V
Output Characteristics
DS
GS
GS
– Drain-Source Voltage (V)
= –5 V
– Gate-Source Voltage (V)
T
– Gate-Source Voltage (V)
A
= –55_C
–2
–2
4
125_C
V
V
GS(off)
GS
25_C
S-04028—Rev. E, 04-Jun-01
= 0 V
–3
–3
V
T
Document Number: 70234
6
= –5 V
A
GS(off)
= –55_C
V
= –5 V
DS
–4
–4
= 10 V
8
–1.5 V
–3.5 V
–1.0 V
–2.0 V
–3.0 V
–2.5 V
–0.5 V
–5
–5
10