C4D20120D Cree Inc, C4D20120D Datasheet - Page 2

• Manufacturer Part Number: C4D20120D
• Description: ZRecTM 10A 1200V SiC Schottky Diode TO-252-2
• Manufacturer: Cree Inc

Specifications of C4D20120D

• Diode Type: Schottky
• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 32A
• Forward Voltage Vf Max: 1.8V
• Forward Surge Current Ifsm Max: 71A

Note:
1.
Typical Performance (Per Leg)
Electrical Characteristics (Per Leg)
Thermal Characteristics
2
Symbol
Symbol
*
Per Leg,
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
V
I
C
θJC
20
18
16
14
12
10
20
18
16
14
12
10
R
F
C
8
6
4
2
0
8
6
4
2
0
0
0
C4D20120D Rev. -
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Thermal Resistance from Junction
to Case
Figure 1. Forward Characteristics
**
0.5
0.5
T
T
T
T
T
Per Device
J
J
J
J
J
=-55°C
= 25°C
= 75°C
=125°C
=175°C
1
1
Parameter
V
F
Forward Voltage
1.5
V
1.5
F
(V)
2
2
2.5
2.5
3
3
0.43
0.85
Typ.
Typ.
754
1.5
2.2
35
65
66
45
38
**
*
3.5
3.5
Max.
Max.
200
400
1.8
3
0.0007
0.0006
0.0005
0.0004
0.0003
0.0002
0.0001
Unit
°C/W
Unit
μA
nC
pF
700
600
500
400
300
200
100
V
0
0
0
0
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 200 A/μs
T
V
V
V
F
F
J
R
R
R
R
R
R
T
T
T
T
T
= 10 A T
= 10 A T
J
J
J
J
J
= 25°C
= 1200 V T
= 1200 V T
= 1200 V, I
= 0 V, T
= 400 V, T
= 800 V, T
=-55°C
= 25°C
= 75°C
=125°C
=175°C
500
500
Test Conditions
Test Conditions
V
J
R
J
J
= 25°C, f = 1 MHz
=25°C
=175°C
Reverse Voltage
J
J
V
F
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
J
J
=25°C
=175°C
= 10A
R
1000
1000
(V)
1500
1500
Note
Note
2000
2000