BSP52T ON Semiconductor, BSP52T Datasheet - Page 2
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BSP52T
Manufacturer Part Number
BSP52T
Description
Manufacturer
ON Semiconductor
Datasheet
1.BSP52T.pdf
(4 pages)
Specifications of BSP52T
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
90V
Emitter-base Voltage
5V
Base-emitter Saturation Voltage (max)
1.9V
Collector-emitter Saturation Voltage
1.3V
Collector Current (dc) (max)
1A
Dc Current Gain
1000
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP52T1G
Manufacturer:
ON
Quantity:
5 000
Company:
Part Number:
BSP52T1G
Manufacturer:
ON Semiconductor
Quantity:
152
Company:
Part Number:
BSP52T1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
BSP52T3G
Manufacturer:
ON
Quantity:
12 500
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(I
(I
(V
(V
(I
(I
(I
(I
C
E
C
C
C
C
CE
EB
= 10 mAdc, I
= 100 mAdc, I
= 150 mAdc, V
= 500 mAdc, V
= 500 mAdc, I
= 500 mAdc, I
= 4.0 Vdc, I
= 80 Vdc, V
C
E
C
= 0)
BE
B
B
CE
CE
= 0)
= 0)
= 0.5 mAdc)
= 0.5 mAdc)
= 0)
= 10 Vdc)
= 10 Vdc)
(Note 3)
Characteristics
(T
A
= 25°C unless otherwise noted)
BSP52T1, BSP52T3
http://onsemi.com
2
V
V
Symbol
V
V
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
h
CES
EBO
FE
1000
2000
Min
5.0
90
−
−
−
−
Max
1.3
1.9
10
10
−
−
−
−
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
−