DMN3404L-7 Diodes Zetex, DMN3404L-7 Datasheet - Page 2

• Manufacturer Part Number: DMN3404L-7
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of DMN3404L-7

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 5.8A
• Power Dissipation: 1.4W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN3404L
Document number: DS31787 Rev. 2 - 2
20
16
12
8
4
0
4. Short duration pulse test used to minimize self-heating effect.
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
Characteristic
1
1.5
V
GS
V
V
GS
GS
= 4.5V
2
= 8V
= 2.0V
2.5
@T
3
A
= 25°C unless otherwise specified
V
V
3.5
GS
GS
= 3.0V
= 2.5V
4
4.5 5
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
DSS
R
Q
t
t
SD
oss
DSS
iss
rss
gs
gd
fs
r
f
g
g
|
2 of 6
Min
1.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
16
12
13.92
0.75
1.51
3.41
6.18
2.84
8
4
0
Typ
386
1.5
9.2
1.2
1.8
24
33
10
44
39
1.5
-
-
-
V
±100
T = 125°C
DS
Max
V
Fig. 2 Typical Transfer Characteristic
1.0
2.0
1.0
A
28
42
GS
-
-
-
-
-
-
-
-
-
-
-
-
-
2
= 5V
, GATE-SOURCE VOLTAGE (V)
T = 150°C
A
Unit
mΩ
μA
nA
nC
nC
nC
2.5
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
T = -55°C
A
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
DD
L
T = 25°C
A
= 2.6Ω, R
3
= 30V, V
= V
= 5V, I
= 15V, V
= 0V, V
= 0V, I
= ±20V, V
= 10V, I
= 4.5V, I
= 0V, I
= 10V, V
= 15V, V
T = 85°C
A
GS
Test Condition
, I
D
D
S
GS
D
D
3.5
= 5.8A
G
= 250μA
D
= 1A
GS
GS
DS
GS
DMN3404L
= 250μA
= 5.8A
DS
= 3Ω
= 4.8A
= 0V, f = 1MHz
= 0V
= 0V,
= 15V, I
= 10V,
© Diodes Incorporated
= 0V
June 2009
4
D
= 5.8A