GP2S60B Sharp Electronics, GP2S60B Datasheet - Page 2
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GP2S60B
Manufacturer Part Number
GP2S60B
Description
Manufacturer
Sharp Electronics
Type
Reflectiver
Datasheet
1.GP2S60B.pdf
(15 pages)
Specifications of GP2S60B
Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
SMT
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
100000ns
Rise Time
100000ns
Pin Count
4
Mounting
Surface Mount
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GP2S60B
Manufacturer:
SHARP
Quantity:
10 000
Company:
Part Number:
GP2S60B
Manufacturer:
SHARP
Quantity:
32 000
Part Number:
GP2S60B
Manufacturer:
SHARP
Quantity:
20 000
■ Internal Connection Diagram
■ Outline Dimensions
Product mass : approx. 0.01g
Pattern for directional
Distinction (NC)
• Unspecifi ed tolerance : ±0.15mm.
• Dimensions in parenthesis are shown for reference.
• Dimensions on the outline drawing is the maximum value excluding
• The dimensions shown do not include burr.
burr.
Burr's dimension : 0.15mm MAX.
Country of origin
Japan
2
1
Plating area
Top view
Emitter center
(0.7)
1
2
(1.8)
2.7
3.2
Top view
(0.7)
Detector center
Opaque resin molding portion
4
3
3
4
Plating material : Au
1
2
3
4
Collector
Emitter
Cathode
Anode
(Unit : mm)
2
Sheet No.: D3-A02101EN
GP2S60