©2011 Silicon Storage Technology, Inc.
A Microchip Technology Company
Features
• High gain:
• High linear output power (at 3.3V):
• High power-added efficiency/Low operating cur-
• Low shut-down current (~2 µA)
• Low Voltage operation down to 2.7V bias.
• Limited variation over temperature
• Temperature and load insensitive on-chip power
• Packages available
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)DS75008
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
rent for both 802.11b/g/n applications
detector
– Typically 25 dB gain across 2.4~2.5 GHz
– Low battery voltage operation: V
– >26 dBm P1dB
– ~2.5% added EVM up to 18 dBm for
– Meets 802.11g OFDM ACPR requirement up to 21.5
– Meets 802.11b ACPR requirement up to 22.5 dBm
– ~32% @ P
– ~36% @ P
– ~1 dB power variation between -40°C to +85°C
– ~2 dB gain variation between -40°C to +85°C
– 8-contact XSON – 2mm x 2mm x 0.45mm
54 Mbps 802.11g signal
dBm
>15 dB dynamic range
OUT
OUT
The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency Power Ampli-
fier designed in compliance with IEEE 802.11b/g/n applications. It typically provides
25 dB gain with 32% power-added efficiency. The SST12LP18E has excellent linear-
ity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E is ideal for
embedded applications because it provides linear power evan at low-battery volt-
ages. With a reference voltage as low as 2.7V, the SST12LP18E will operate from
-20°C to +85°C and is offered in a 8-contact XSON package.
= 22.5 dBm for 802.11b
= 21.5 dBm for 802.11g
2.4 GHz High-Power, High-Gain Power Amplifier
REF
as low as 2.7V.
www.microchip.com
Block Diagram
Product Ordering
Valid combinations for SST12LP18E
SST12LP18E Evaluation Kits
Note: Valid combinations are those products in mass produc-
SST12LP18E-QX8E
SST12LP18E-QX8E-K
tion or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
RF
IN
V
V
CCB
CC1
Bias Circuit
V
V
CC2
REF
SST12LP18E
DET
DS75008A
75008 B1.0
Product Brief
RF
OUT
05/11