MC9S08GW64CLH Freescale Semiconductor, MC9S08GW64CLH Datasheet - Page 40

S08 8bit Microcontroller

MC9S08GW64CLH

Manufacturer Part Number
MC9S08GW64CLH
Description
S08 8bit Microcontroller
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets

Specifications of MC9S08GW64CLH

Processor Series
MC9S08GW64
Core
S08
Data Bus Width
8 bit
Program Memory Type
Flash
Program Memory Size
64 KB
Data Ram Size
4032 B
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
45
Number Of Timers
3
Operating Supply Voltage
- 0.3 V to + 3.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
LQFP-64
Operating Temperature Range
- 40 C to + 85 C
Supply Current (max)
60 uA
Core Processor
HCS08
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LCD, PWM, WDT
Number Of I /o
57
Eeprom Size
-
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 16x16b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S08GW64CLH
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Electrical Characteristics
3.14
3.15
This section provides details about program/erase times and program-erase endurance for the FLASH memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
40
1
1
C
D
D
D
D
D
D
D
V
The frequency of this clock is controlled by a software setting.
IREG
C
D
D
D
D
P
P
P
P
D
D
C
C
LCD Frame Frequency
LCD Charge Pump Capacitance
LCD Bypass Capacitance
LCD Glass Capacitance
V
V
V
IREG
IREG
IREG
Max can not exceed V
LCD Specifications
FLASH Specifications
Supply voltage for program/erase
-40C to 85C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
T
T = 25C
TRIM Resolution
Ripple
L
to T
H
= –40C to + 85C
Characteristic
5
2
2
3
Characteristic
DD
3
-0.15 V
1
4
MC9S08GW64 Series MCU Data Sheet, Rev. 3
Table 21. LCD Electricals, 3-V Glass
Table 22. FLASH Characteristics
2
2
HRefSel = 0
HRefSel = 1
HRefSel = 0
HRefSel = 1
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
Symbol
C
10,000
V
f
C
C
Frame
BYLCD
Min
150
RTRIM
1.8
1.8
IREG
15
glass
LCD
5
100,000
Typical
1.49
Min
20,000
.89
1.5
28
4000
100
9
4
4
6
DD
2000
1.00
1.67
Typ
100
100
30
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
3.6
3.6
1.85
8000
Max
1.15
100
100
.15
58
.1
1
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
V
Unit
Hz
IREG
nF
nF
pF
%
V
V

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