BFP 420 E6740 Infineon Technologies, BFP 420 E6740 Datasheet - Page 3
BFP 420 E6740
Manufacturer Part Number
BFP 420 E6740
Description
RF Bipolar Small Signal NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BFP_420_E6740.pdf
(10 pages)
Specifications of BFP 420 E6740
Lead Free Status / Rohs Status
Details
Other names
BFP420E6740XT
1
2
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
Power gain, maximum stable
I
Z
Insertion power gain
V
Z
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
G ms = | S 21 / S 12 |
IP3 value depends on termination of all intermodulation frequency components.
L
S
S
CB
CE
EB
CE
CE
= 30 mA, V
= 5 mA, V
= 20 mA, V
= 20 mA, V
= Z
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= 2 V, I
Lopt
L
L
= 50
= 50
, f = 1.8 GHz
C
C
CE
CE
CE
= 20 mA, f = 1.8 GHz,
= 20 mA, f = 1.8 GHz,
CE
= 2 V, f = 1.8 GHz, Z
= 3 V, f = 2 GHz
= 2 V, Z
= 2 V, Z
BE
BE
S
S
CB
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
1)
Sopt
L
A
= 50
= 25°C, unless otherwise specified
,
2)
S
,
= Z
Sopt
3
Symbol
f
C
C
C
F
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
21
3
|
2
min.
18
14
-
-
-
-
-
-
-
Values
0.15
0.37
0.55
typ.
1.1
25
21
17
22
12
2007-04-20
max.
0.3
-
-
-
-
-
-
-
-
BFP420
Unit
GHz
pF
dB
dB
dBm