MRF392 M/A-COM Technology, MRF392 Datasheet

RF Bipolar Power 100-400MHz 125Watts 28Volt Gain 10dB

MRF392

Manufacturer Part Number
MRF392
Description
RF Bipolar Power 100-400MHz 125Watts 28Volt Gain 10dB
Manufacturer
M/A-COM Technology
Datasheet

Specifications of MRF392

Configuration
Dual
Maximum Operating Frequency
500 MHz
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
16 A
Power Dissipation
270 W
Package / Case
Case 744A-01
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF392
Manufacturer:
M/A-COM
Quantity:
124
Part Number:
MRF392
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
The RF Line Controlled “Q” Broadband Power Transistor
125W, 30 to 500MHz, 28V
MRF392
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
The MRF392 is two transistors in a single package with separate base and collector
leads and emitters common. This arrangement provides the designer with a space
saving device capable of operation in a push–pull configuration.
Specified 28 V, 400 MHz characteristics —
Built–in input impedance matching networks for broadband operation
Push–pull configuration reduces even numbered harmonics
Gold metallization system for high reliability
100% tested for load mismatch
Output power = 125 W
Typical gain = 10 dB
Efficiency = 55% (typ.)
PUSH–PULL TRANSISTORS
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Product Image
CASE 744A–01, STYLE 1
M/A-COM Products
Released - Rev. 07.07

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MRF392 Summary of contents

Page 1

... Gold metallization system for high reliability • 100% tested for load mismatch The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. ...

Page 2

... MRF392 The RF Line Controlled “Q” Broadband Power Transistor 125W 500MHz, 28V 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF392 The RF Line Controlled “Q” Broadband Power Transistor 125W 500MHz, 28V 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF392 The RF Line Controlled “Q” Broadband Power Transistor 125W 500MHz, 28V 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF392 The RF Line Controlled “Q” Broadband Power Transistor 125W 500MHz, 28V 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF392 The RF Line Controlled “Q” Broadband Power Transistor 125W 500MHz, 28V 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

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