MRF134 M/A-COM Technology, MRF134 Datasheet

RF MOSFET Power 5-400MHz 5 Watts 28Volt Gain 11dB

MRF134

Manufacturer Part Number
MRF134
Description
RF MOSFET Power 5-400MHz 5 Watts 28Volt Gain 11dB
Manufacturer
M/A-COM Technology
Datasheet

Specifications of MRF134

Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
40 V
Continuous Drain Current
0.9 A
Power Dissipation
17.5 W
Maximum Operating Temperature
+ 150 C
Package / Case
Case 211-07
Minimum Operating Temperature
- 65 C
Transistor Polarity
N-Channel
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF134
Manufacturer:
KOA
Quantity:
600 000
Part Number:
MRF134
Manufacturer:
M/A-COM
Quantity:
20 000
Part Number:
MRF134-39
Manufacturer:
ASI
Quantity:
20 000
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
The RF MOSFET Line: Broadband RF Power FET
5.0W, to 400MHz, 28V
MRF134
Designed for wideband large–signal amplifier and oscillator
applications up to 400 MHz range.
N–Channel enhancement mode
Guaranteed 28V, 150 MHz performance
Small– and large–signal characterization
Typical performance at 400 MHz, 28V, 5.0W
100% tested for load mismatch at all phase angles with 30:1 VSWR
Low noise figure: 2.0 dB (Typ.) at 200 mA, 150 MHz
Excellent thermal stability, ideally suited for Class A operation
Output power = 5.0 watts
Minimum gain = 11 dB
Efficiency = 55% (Typical)
Output = 10.6 dB gain
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Product Image
M/A-COM Products
Released - Rev. 05202009

Related parts for MRF134

MRF134 Summary of contents

Page 1

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28V, 150 MHz performance Output power = 5.0 watts Minimum gain = 11 dB Efficiency = 55% (Typical) • ...

Page 2

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 7

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 8

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 9

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 10

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 10 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 11

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V DESIGN CONSIDERATIONS The MRF137 power N–Channel enhancement- mode field–effect transistor (FET) designed especially for VHF power amplifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V– ...

Page 12

... MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V 12 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Related keywords