MRF160 M/A-COM Technology, MRF160 Datasheet - Page 8

• Manufacturer Part Number: MRF160
• Description: RF MOSFET Power 5-500MHz 4Watts 28Volt Gain 16dB
• Manufacturer: M/A-COM Technology

Specifications of MRF160

• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 24 W
• Maximum Operating Temperature: + 150 C
• Package / Case: Case 249-06
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Details

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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
The RF MOSFET Line: Broadband Power FET
4W, to 500MHz, 28V
MRF160
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Products
Released - Rev. 07.07