2SK880-BL(TE85L,F) Toshiba, 2SK880-BL(TE85L,F) Datasheet

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2SK880-BL(TE85L,F)

Manufacturer Part Number
2SK880-BL(TE85L,F)
Description
Various MOSFETs N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA
Manufacturer
Toshiba
Datasheet

Specifications of 2SK880-BL(TE85L,F)

Lead Free Status / Rohs Status
 Details
Audio Frequency Low Noise Amplifier Applications
Absolute Maximum Ratings
Marking
Electrical Characteristics
High |Y
High breakdown voltage: V
Low noise: NF = 1.0dB (typ.)
High input impedance: I
Small package
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
fs
|: |Y
Characteristics
Characteristics
at V
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
fs
DS
| = 15 mS (typ.) at V
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
= 10 V, I
GSS
GDS
D
= −1 nA (max) at V
= 0.5 mA, f = 1 kHz, R
(Ta = 25°C)
= −50 V
(Ta = 25°C)
V
V
Symbol
Symbol
GS (OFF)
(BR) GDS
NF (1)
NF (2)
V
DS
⎪Y
I
I
C
T
C
GSS
DSS
P
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
= 10 V, V
2SK880
V
V
V
V
V
V
V
V
I
V
I
GS
D
D
GS
DS
DS
DS
DS
DS
DG
DS
DS
= 0.5 mA, f = 10 Hz
= 0.5 mA, f = 1 kHz
GS
−55~125
= −30 V
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, R
= 10 V, R
G
= −30 V, V
= 10 V, I
−50
100
125
10
= 0
= 1 kΩ
1
G
= −100 μA
Test Condition
D
D
GS
GS
GS
G
G
= 0.1 μA
DS
= 0, f = 1 MHz
= 1 kΩ
= 1 kΩ
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
Unit
mW
mA
°C
°C
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.2
Min
−50
1.2
4.0
Typ.
15
13
3
5
1
2-2E1B
SC-70
2007-11-01
−1.0
14.0
−1.5
Max
2SK880
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V

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2SK880-BL(TE85L,F) Summary of contents

Page 1

... NF (2) = 0.5 mA kHz JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.006 g (typ.) Min Typ. Max ⎯ ⎯ −1.0 −50 ⎯ ⎯ ⎯ 1.2 14.0 −0.2 ⎯ −1.5 ⎯ 4.0 15 ⎯ ⎯ 13 ⎯ ⎯ 3 ⎯ ⎯ 5 ⎯ ⎯ 1 2007-11-01 2SK880 Unit: mm Unit ...

Page 2

... 2 2SK880 2007-11-01 ...

Page 3

... 3 2SK880 2007-11-01 ...

Page 4

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SK880 2007-11-01 ...

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