MRF422 M/A-COM Technology, MRF422 Datasheet

RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB

MRF422

Manufacturer Part Number
MRF422
Description
RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB
Manufacturer
M/A-COM Technology
Datasheet
1.MRF422.pdf (6 pages)

Specifications of MRF422

Configuration
Single
Maximum Operating Frequency
30 MHz
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
20 A
Maximum Dc Collector Current
30 A
Power Dissipation
290 W
Package / Case
Case 211-11
Dc Collector/base Gain Hfe Min
15
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Transistor Polarity
NPN
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF422
Manufacturer:
EUPEC
Quantity:
23
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MRF422
Manufacturer:
ASI
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF422MP
Manufacturer:
MA/COM
Quantity:
5 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MRF422MP
Manufacturer:
MA/COM
Quantity:
20 000
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
The RF Line NPN Silicon Power Transistor
150W(PEP), 30MHz, 28V
MRF422
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
•
•
•
Specified 28 V, 30 MHz characteristics —
Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
100% tested for load mismatch at all phase angles with 30:1 VSWR
Output power = 150 W (PEP)
Minimum gain = 10 dB
Efficiency = 40%
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Product Image
CASE 211–11, STYLE 1
M/A-COM Products
Released - Rev. 07.07

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MRF422 Summary of contents

Page 1

... MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designed primarily for applications as a high–power linear amplifier from 2 MHz. • Specified MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • ...

Page 2

... MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF422 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

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