UF28150J M/A-COM Technology, UF28150J Datasheet

RF MOSFET Power 100-500MHz 150Watts 28Volt Gain 8dB

UF28150J

Manufacturer Part Number
UF28150J
Description
RF MOSFET Power 100-500MHz 150Watts 28Volt Gain 8dB
Manufacturer
M/A-COM Technology
Datasheet
1.UF28150J.pdf (3 pages)

Specifications of UF28150J

Configuration
Dual
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
389 W
Maximum Operating Temperature
+ 150 C
Package / Case
Case 375-04
Minimum Operating Temperature
- 65 C
Transistor Polarity
N-Channel
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UF28150J
Manufacturer:
M/A-COM
Quantity:
5 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UF28150J
Manufacturer:
MA/COM
Quantity:
20 000
1
RF Power MOSFET Transistor
150W, 100MHz-500MHz, 28V
Features
•
•
•
1. Exceeding any one or combination of these limits may cause permanent damage
2. M/A-COM does not recommend sustained operation near these maximum limits.
3. At 25°C Tcase, unless noted.
ELECTRICAL SPECIFICATIONS: 25°C
UF28150J
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Notes:
* Per side
** At all phase angles
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
to this device.
DMOS structure
Lower capacitance for broadband operation
Common source configuration
Parameter
Parameter
Symbol
T
V
V
Θ
I
P
T
STG
DS
DS
GS
JC
D
J
1, 2, 3
V
V
V
V
V
V
V
V
V
V
V
-65 to +150
GS
DS
GS
DS
DS
DS
DS
DS
DD
DD
DD
Rating
= 28.0 V, V
= 10.0 V, I
= 10.0 V, I
= 28.0V, F = 1.0 MHz*
= 28.0V, F = 1.0 MHz*
= 28.0V, F = 1.0 MHz*
= 0.0 V, I
= 20 V, V
= 28.0 V, I
= 28.0 V, I
= 28.0 V, I
0.45
389
200
16*
65
20
DS
DS
DS
DS
DQ
DQ
DQ
GS
= 20.0 mA*
= 0.0 V*
= 400.0 mA*
= 4000.0 mA, ∆V
= 400.0 mA, P
= 400.0 mA, P
= 400.0 mA, P
Units
°C/W
= 0.0V*
°C
°C
W
V
V
A
Test Conditions
Package Outline
OUT
OUT
OUT
GS
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
= 150.0 W, F = 500 MHz
= 150.0 W, F = 500 MHz
= 150.0 W, F = 500 MHz
= 1.0 V, 80µs pulse*
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Released;
VSWR-T
M/A-COM Products
V
BV
Units
C
C
C
I
I
GS(TH)
G
G
DSS
GSS
η
OSS
RSS
ISS
DSS
D
M
P
RoHS Compliant
Min.
2.0
2.0
65
55
—
—
—
—
—
—
8
10:1**
Max.
180
120
4.0
4.0
6.0
32
—
—
—
—

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UF28150J Summary of contents

Page 1

... UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage V DS Gate-Source Voltage V GS Drain-Source Current I DS Power Dissipation P D Junction Temperature T J Storage Temperature ...

Page 2

... UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V Capacitance vs Voltage F=1.0 MHz V (V) DS Gain vs Frequency V =28V P =100W I DD OUT Frequency (MHz) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

Page 3

... OF 50 OHM (.85’ OD) SEMI-RIGID CABLE 2.50’ OHM (.70’ OD) SEMI-RIGID CABLE 2.50’ OHM (.141’ OD) SEMI-RIGID CABLE 5uH 16 TURNS OF NO. 18 AWG ON TORID CORE (INDIANA GENERAL F6278-Q1) 4 TURNS OF NO. 18 AWG ON .125 DIAMETER 9 TURNS OF NO. 18 AWG ON 15 OHM 2 W. 10% RESISTOR UF28150J ...

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