MRF426 M/A-COM Technology, MRF426 Datasheet

RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB

MRF426

Manufacturer Part Number
MRF426
Description
RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB
Manufacturer
M/A-COM Technology
Datasheet
1.MRF426.pdf (7 pages)

Specifications of MRF426

Configuration
Single
Maximum Operating Frequency
30 MHz
Collector- Emitter Voltage Vceo Max
35 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
3 A
Maximum Dc Collector Current
6 A
Power Dissipation
70 W
Package / Case
Case 211-07
Dc Collector/base Gain Hfe Min
10
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Transistor Polarity
NPN
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF426
Manufacturer:
m/a-com
Quantity:
5 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MRF426
Manufacturer:
MA/COM
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF426MP
Manufacturer:
MA/COM
Quantity:
5 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MRF426MP
Manufacturer:
MA/COM
Quantity:
20 000
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
The RF Line NPN Silicon Power Transistor
25W(PEP), 30MHz, 28V
MRF426
Designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
•
•
•
•
•
Specified 28 V, 30 MHz characteristics —
Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
100% tested for load mismatch at all phase angles with 30:1 VSWR
Class A and AB characterization
BLX 13 equivalent
Output power = 25 W (PEP)
Minimum gain = 22 dB
Efficiency = 35%
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Product Image
CASE 211–07, STYLE 1
M/A-COM Products
Released - Rev. 05202009

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MRF426 Summary of contents

Page 1

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1 MHz HF/SSB equipment. • Specified MHz characteristics — Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max) • ...

Page 2

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 7

... MRF426 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

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