BAS40-T1 (P) Infineon Technologies, BAS40-T1 (P) Datasheet - Page 2

• Manufacturer Part Number: BAS40-T1 (P)
• Description: Schottky (Diodes & Rectifiers) HiRel Silicon Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of BAS40-T1 (P)

• Package: T1
• Comment: Also available in (H) and (S) quality
• If (max): 120.0 mA
• Vbr (min): 40.0 V
• Rf (typ): 10.0 Ohm
• Other names: BAS40T1PZZ

Maximum Ratings
Electrical Characteristics
at T
Notes.:
1.) t  10ms, Duty Cycle=10%
2.) At T
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
4.)
IFAG IMM RPD D HIR
Parameter
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Junction Temperature
Thermal Resistance Junction-Case
Parameter
DC Characteristics
Reverse Current 1, V
Reverse Current 2, V
Forward Voltage 1, I
Forward Voltage 2, I
Forward Voltage 3, I
Differential Forward Resistance
I
AC Characteristics
Total Capacitance
V
F
R
=10mA, I
=0V; f=1MHz
A
=25°C; unless otherwise specified
CASE
R
FD
= 125 °C. For T
=----------------
F
=15mA
V
5x10 -3 A
F
2)
F1
F2
F3
R
R
=1mA
=10mA
=40mA
=40V
=30V
1)
3)
CASE
> 125 °C derating is required.
4)
Symbol
V
I
I
P
T
T
T
T
R
Symbol
I
I
V
V
V
R
C
F
FSM
R1
R2
op
stg
sol
j
R
tot
F1
F2
F3
th(j-c)
FD
T
2 of 3
min.
-
-
0,29
0,42
0,68
7,5
2,2
-55 to +150
-55 to +150
Values
2,9
typ.
-
-
0,33
0,45
0,7
10
Values
+250
120
170
250
150
100
40
V2, February 2011
max.
10
1
0,39
0,54
0,85
11,5
5,0
BAS40
Unit
V
mA
mA
mW
°C
°C
°C
°C
K/W
Unit
µA
µA
V
V
V

pF