1N5062GP-E3/1 Vishay, 1N5062GP-E3/1 Datasheet - Page 2

Rectifiers 1.0 Amp 800 Volt

1N5062GP-E3/1

Manufacturer Part Number
1N5062GP-E3/1
Description
Rectifiers 1.0 Amp 800 Volt
Manufacturer
Vishay
Datasheet

Specifications of 1N5062GP-E3/1

Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.2 V
Recovery Time
2000 ns
Forward Continuous Current
1 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Package / Case
DO-15
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details
1N5059 to 1N5062
Vishay Semiconductors
Maximum Thermal Resistance
T
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
2
Junction ambient
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Diode capacitance
amb
amb
15764
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Max. Reverse Power Dissipation vs. Junction
200
160
120
80
40
0
25
Parameter
Parameter
50
T
j
160 K/W
- Junction Temperature ( °C )
R
75
45 K/W
100 K/W
thJA
1N5059
Temperature
=
100
1N5060
1N5061
125
V
Lead length l = 10 mm,
T
on PC board with spacing 25
mm
I
I
V
V
V
I
I
V
F
F
R
F
R
L
R
R
R
R
1N5062
= 1 A
= 2.5 A
= 0.5 A, I
= 100 µA
= V
= constant
= V
= V
= V
= 0 V, f = 1 MHz
150
RRM
RRM
RRM
RRM
Test condition
Test condition
175
, T
, T
R
= 1 A, i
j
j
= 100 °C
= 150 °C
R
= 0.25 A
1N5059
1N5060
1N5061
1N5062
Part
15765
Figure 2. Max. Reverse Current vs. Junction Temperature
Symbol
1000
R
R
100
0.1
thJA
thJA
10
1
25
Symbol
V
V
V
V
(BR)R
(BR)R
(BR)R
(BR)R
C
V
V
I
I
I
t
R
R
R
rr
V
F
F
D
R
50
T
= V
j
- Junction Temperature ( °C )
RRM
75
Min
225
450
650
900
100
Value
100
45
125
Typ.
40
150
Document Number 86000
175
1600
1600
1600
1600
Rev. 1.5, 13-Apr-05
1.15
Max
100
10
1
1
4
K/W
K/W
Unit
Unit
µA
µA
µA
pF
µs
V
V
V
V
V
V

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