1SS422(T5L,F,T) Toshiba, 1SS422(T5L,F,T) Datasheet

1SS422(T5L,F,T)

Manufacturer Part Number

1SS422(T5L,F,T)

Description

Rectifiers Vr=30V Io=0.1A 3Pin

Manufacturer

Toshiba

Datasheet

1.1SS422T5LFT.pdf (3 pages)

Specifications of 1SS422(T5L,F,T)

Product

Ultra Fast Recovery Rectifier

Forward Voltage Drop

0.23 V

Forward Continuous Current

100 mA

Max Surge Current

1 A

Mounting Style

SMD/SMT

Package / Case

SSM

Lead Free Status / Rohs Status

Details

Current page: 1 of 3
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High-Speed Switching Applications

Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA

•

Absolute Maximum Ratings

Electrical Characteristics

Marking

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10 ms)

Power dissipation

Junction temperature

Storage temperature range

Operating temperature range

Note: Using continuously under heavy loads (e.g. the application of high

*: This is the absolute maximum rating for a single diode . Where two diodes are used, the absolute maximum rating

Forward voltage

Reverse current

Total capacitance

(between Cathode and Anode)

Small package suitable for mounting on a small space

per diode is 75% that for the single diode.

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

(Ta = 25°C)

Symbol

R (1)

R (2)

FSM

F (1)

F (2)

F (3)

opr

stg

1SS422

= 1 mA

= 5 mA

= 100 mA

= 10 V

= 30 V

= 0, f = 1 MH

−55~125

−40~100

Rating

200*

100*

125

Test Condition

Unit

°C

JEDEC

JEITA

TOSHIBA

Weight: 0.0024 g (typ.)

Min

―

Typ.

0.18

0.23

0.38

―

1.ANODE1

2.CATHODE2

3.CATHODE1

1-2S1C

ANODE2

―

2007-11-01

Max

0.5

―

1SS422

Unit: mm

Unit

μA

Related parts for 1SS422(T5L,F,T)

1SS422(T5L,F,T) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

100 100m Ta = 100° 10m 0.1 100u 0.01 10u 0 0.1 0.2 0.3 FORWARD VOLTAGE VF ( 100 REVERSE VOLTAGE VR ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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