MA4P505-1072T M/A-COM Technology, MA4P505-1072T Datasheet - Page 2

PIN Diodes .1-1500MHz .7pF Min Vr 500Vdc

MA4P505-1072T

Manufacturer Part Number
MA4P505-1072T
Description
PIN Diodes .1-1500MHz .7pF Min Vr 500Vdc
Manufacturer
M/A-COM Technology
Datasheet

Specifications of MA4P505-1072T

Reverse Voltage
500 V
Termination Style
SMD/SMT
Package / Case
MELF-1072
Carrier Life
2 us
Maximum Diode Capacitance
0.65 pF
Maximum Operating Temperature
+ 175 C
Maximum Series Resistance @ Maximum If
0.45 Ohms
Minimum Operating Temperature
- 65 C
Power Dissipation
15 W
Lead Free Status / Rohs Status
 Details
2
Notes:
1. Only available in case styles indicated.
2. The minimum specified V
3. Nominal carrier life time specified with diode biased at I
4. Ct tested at 100V
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Notes:
1. The minimum specified V
2. At V
3. R
4. Nominal carrier life time specified with diode biased at I
5. Nominal T
Packaged PIN Diodes
MADP-000234-10720T
30
leakage current, Ir, is measured to be <10μA.
MA4PH235-1072T
MA4PH236-1072T
MA4PH237-1079T
MA4PH238-1072T
MA4PH239-1079T
35V to 500V MELF General Purpose Switching Diodes Specifications (T
s
Part Number
MA4P203-30
MA4P303-32
MA4P404-30
Part Number
MA4P202-120
measured at I
R
= -50V
31,32, 94
RR
Consult the “Package Availability Table” on page 7 for package style choices.
100V to 250V Fast Switching PIN Diodes Specifications (T
(reverse recovery time) specified with diode biased at I
F
Package dimensions
1
= +50mA, f = 100MHz.
111
@ I
Minimum
Reverse
Voltage
R
Minimum
R
I
Reverse
Voltage
R
(Reverse Voltage) is sourced and the resultant reverse
(Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA
Volts
Volts
R
<10μA
200
200
200
200
500
100
200
35
100
250
<10μA
120, 255
2
1
Capacitance
Maximum
C
f = 1MHz
( Unless otherwise
can be found on the M/A-COM Technology Solutions website
T
Capacitance
@10V
1.5
1.2
0.5
1.5
0.5
0.8
pF
C
Maximum
specified )
f = 1MHz
T
4
@ -10V
0.25
0.35
0.35
0.40
pF
Package Options
186
2
(Unless otherwise
0.25@100mA
F
F
Series Res.
f = 100MHz
R
Maximum
= +10mA , I
= +10mA , I
0.6@50mA
specified)
S
@10mA
25.0
0.5
3.0
6.0
(
Ω
Unless otherwise
Series Res.
R
f = 500MHz
Maximum
specified )
S
276
@ 10mA
1.50
1.50
2.50
0.60
F
REV
REV
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Ω
= +20mA , I
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
= -6mA
= -6mA
Dissipation
3
CW Power
Visit www.macomtech.com for additional data sheets and product information.
Rating
Watts
1.0
1.0
2.0
1.0
2.0
5.0
Resistance
REV
Maximum
Thermal
1088
°C/W
= -200mA.
60
30
30
20
Typical I
R
0.30-0.60
1.20-2.40
When
S
mA
= 75Ω
Nominal Characteristics
Lifetime
Carrier
1072
Case Styles 1072, 1079
F
1000
AMB
100
200
Nominal Characteristics
nS
60
• China Tel: +86.21.2407.1588
= +25°C)
Lifetime
Carrier
4
0.3
1.5
3.0
2.0
6.0
3.0
μS
131,132
AMB
T
100
Chip
nS
20
60
RR
5
3
5
= +25°C)
I-Region
I-Region
Microns
Width
Width
mils
14.0
0.4
2.0
3.0
4.0
2.0
µM
12
12
20
30
1056
V.9

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