5962-8754601PA National Semiconductor, 5962-8754601PA Datasheet
5962-8754601PA
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5962-8754601PA Summary of contents
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... The device features a short circuit protected active pull-up with low output impedance and is specified to drive 50Ω transmission lines at high speed. The mini-DIP provides high package density. Connection Diagram © 2004 National Semiconductor Corporation Features n Single 5V supply n Schottky technology n TTL and CMOS compatible inputs ...
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... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Storage Temperature Range Ceramic DIP Molded DIP and SO-8 Lead Temperature Recommended Operating Conditions Supply Voltage (V Output Current HIGH (I Output Current LOW (I Operating Temperature (T Note 1: Derate cavity package 8.7 mW/˚ ...
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Switching Characteristics V = 5.0V 25˚ Symbol Parameter t Propagation Delay PHL t PLH t Fall Time, 90%–10 Rise Time, 10%–90 –t Skew Between Outputs PO PO A/A and B/B DC Test ...
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DC Test Circuit (Continued) Note 6: The pulse generator has the following characteristics: C includes probe and jig capacitance. L PRR = 500 kHz 100 ns, W ≤ 5.0 ns 50Ω www.national.com 00962204 ...
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Physical Dimensions inches (millimeters) unless otherwise noted Ceramic Dual-In-Line Package (J) Order Number DS9638MJ/883 NS Package Number J08A Ceramic Dual-In-Line Package (M) Order Number DS9638CM NS Package Number M08A 5 www.national.com ...
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... BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...