MT46V64M8FN-6:D Micron Technology Inc, MT46V64M8FN-6:D Datasheet - Page 39
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MT46V64M8FN-6:D
Manufacturer Part Number
MT46V64M8FN-6:D
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M8FN-6D.pdf
(91 pages)
Specifications of MT46V64M8FN-6:D
Organization
64Mx8
Density
512Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
175mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V64M8FN-6:D
Manufacturer:
MICRON
Quantity:
885
Company:
Part Number:
MT46V64M8FN-6:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 15:
Figure 16:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Reduced Drive Pull-Down Characteristics
Reduced Drive Pull-Up Characteristics
40. The voltage levels used are derived from a minimum V
41.
42. V
43.
39d. The driver pull-up current variation, within nominal voltage and temperature
39e. The full ratio variation of the MAX-to-MIN pull-up and pull-down current should
39f. The full ratio variation of the nominal pull-up to pull-down current should be
80
70
60
50
40
30
20
10
0
load. In practice, the voltage levels obtained from a properly terminated bus will pro-
vide significantly different voltage values.
V
width can not be greater than 1/3 of the cycle rate. VIL undershoot: VIL (MIN) =
for a pulse width ≤ 3ns, and the pulse width can not be greater than 1/3 of the cycle
rate.
t
prevail over
-10
-20
-30
-40
-50
-60
-70
-80
HZ (MAX) will prevail over
0 . 0
0
IH
DD
0.0
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 16 on page 39.
be between 0.71 and 1.4 for device drain-to-source voltages from 0.1V to 1.0V at
the same voltage and temperature.
unity ±10%, for device drain-to-source voltages from 0.1V to 1.0V.
overshoot: V
and V
DD
0 . 5
0.5
t
DQSCK (MIN) +
Q must track each other.
IH
(MAX) = V
1 . 0
1.0
V
DD
V
Q - V
OUT
39
(V)
OUT
t
DQSCK (MAX) +
t
(V)
RPRE (MAX) condition.
DD
1 . 5
1.5
Q + 1.5V for a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2.0
2.0
512Mb: x4, x8, x16 DDR SDRAM
t
RPST (MAX) condition.
pulse width ≤ 3ns, and the pulse
2.5
2.5
DD
level and the referenced test
©2000 Micron Technology, Inc. All rights reserved.
t
LZ (MIN) will
–
1.5V