ES3B-E3/57T General Semiconductor / Vishay, ES3B-E3/57T Datasheet - Page 3

• Manufacturer Part Number: ES3B-E3/57T
• Description: RECTIFIER, 3A, 100V, 20NS, UF PLASTIC, SMD
• Manufacturer: General Semiconductor / Vishay

Specifications of ES3B-E3/57T

• Capacitance, Junction: 45 pF
• Current, Forward: 3 A
• Current, Reverse: 500 μA
• Current, Surge: 100 A
• Package Type: DO-214AB (SMC)
• Primary Type: Rectifier
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 20 ns
• Voltage, Forward: 0.9 V
• Voltage, Reverse: 100 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10 000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
0
Percent of Rated Peak Reverse Voltage (%)
0.3
Instantaneous Forward Voltage (V)
20
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
T
0.060 (1.52)
0.030 (0.76)
J
= 125 °C
T
J
= 150 °C
0.5
T
T
J
J
T
= 150 °C
= 125 °C
J
40
= 100 °C
0.7
T
J
T
= 25 °C
J
DO-214AB (SMC)
T
= 25 °C
60
J
= 100 °C
0.280 (7.11)
0.260 (6.60)
0.320 (8.13)
0.305 (7.75)
0.9
Cathode Band
0.008 (0.2)
80
1.1
0 (0)
100
1.3
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.126 (3.20) MIN.
30
20
10
50
40
0
0.1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.320 REF.
Reverse Voltage (V)
1
ES3A thru ES3D
0.185 (4.69) MAX.
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
100
3