MAX5062BASA-T Maxim Integrated Products, MAX5062BASA-T Datasheet - Page 2

• Manufacturer Part Number: MAX5062BASA-T
• Description: MOSFET & Power Driver ICs 125V 2A Half-Bridge MOSFET Driver
• Manufacturer: Maxim Integrated Products
• Type: High Side/Low Sider

Specifications of MAX5062BASA-T

• Rise Time: 65 ns
• Fall Time: 65 ns
• Supply Voltage (min): 8 V
• Supply Current: 3 mA
• Maximum Power Dissipation: 470.6 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2

ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
V
DL, BBM .....................................................-0.3V to (V
HS............................................................................-5V to +130V
DH to HS.....................................................-0.3V to (V
BST to HS ...............................................................-0.3V to +15V
AGND to PGND (MAX5064) ..................................-0.3V to +0.3V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS
(V
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
POWER SUPPLIES
Operating Supply Voltage
V
V
BST Quiescent Supply Current
BST Operating Supply Current
UVLO (V
UVLO (BST to HS)
UVLO Hysteresis
LOGIC INPUT
Input-Logic High
Input-Logic Low
Logic-Input Hysteresis
DD
DD
DD
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
DD
DD
, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V
_______________________________________________________________________________________
= V
= V
Quiescent Supply Current
Operating Supply Current
BST
BST
DD
PARAMETER
= +12V and T
to GND)
= +8V to +12.6V, V
A
= +25°C.) (Note 1)
A
HS
= +70°C)
= GND = 0V, BBM = open, T
UVLO
SYMBOL
UVLO
I
I
V
BSTO
V
V
I
DDO
V
I
BST
HYS
DD
DD
IH_
IL_
VDD
BST
(Note 2)
IN_H = IN_L = GND
(no switching)
f
IN_H = IN_L = GND (no switching)
f
V
BST rising
MAX5062_/MAX5064A,
CMOS (V
MAX5063_/MAX5064B, TTL version
MAX5062_/MAX5064A,
CMOS (V
MAX5063_/MAX5064B, TTL version
MAX5062_/MAX5064A,
CMOS (V
MAX5063_/MAX5064B, TTL version
SW
SW
DD
DD
DD
= 500kHz, V
= 500kHz, V
rising
+ 0.3V)
+ 0.3V)
DD
DD
DD
/ 2) version
/ 2) version
/ 2) version
CONDITIONS
A
DD
DD
= -40°C to +125°C, unless otherwise noted. Typical values are at
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*Per JEDEC 51 standard multilayer board.
= +12V
= V
8-Pin SO with Exposed Pad (derate 19.2mW/°C
12-Pin Thin QFN (derate 24.4mW/°C
BST
above +70°C)* ....................................................1538.5mW
above +70°C)* ....................................................1951.2mW
MAX5062_/
MAX5063_
MAX5064_
= +12V
0.67 x
MIN
V
8.0
6.5
6.0
DD
2
0.55 x
0.4 x
TYP
1.65
0.25
V
V
120
7.3
6.9
0.5
1.4
1.6
70
15
DD
DD
0.33 x
MAX
12.6
V
140
260
8.0
7.8
0.8
40
DD
3
3
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
V