ZXGD3102T8TA Diodes Inc, ZXGD3102T8TA Datasheet - Page 9

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ZXGD3102T8TA

Manufacturer Part Number
ZXGD3102T8TA
Description
MOSFET & Power Driver ICs BIPOLAR TRANSISTOR GATE DRIVER NPN/PNP SMB GREEN 1K
Manufacturer
Diodes Inc
Type
High Side/Low Sider
Datasheet

Specifications of ZXGD3102T8TA

Rise Time
5100 ns
Fall Time
110 ns
Supply Voltage (min)
5 V
Supply Current
5.2 mA
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Number Of Outputs
1

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
ZXGD3102T8TA
Quantity:
810
Component Selection
It is advisable to decouple the ZXGD3102 closely to V
gate currents, as indicated by C1 in Figure 4. In applications where the input voltage is higher than
12V, it is recommended to use a Zener diode, ZD1 as shown in the Typical Application Circuit on page
1, and in Figure 2, in order to limit the V
maximum voltage applied to the gate of the MOSFET. A suitable value for the Zener is 10V.
The proper selection of external resistors R
Select a value for resistor R
then be selected to give a bias current, I
threshold voltage V
R
R
Alternatively, R
29mV’ at V
External gate resistor to GATEH pin is optional. It can be inserted to control the turn-on gate rise time
which may help with in-rush current protection, EMI issues or power dissipation within the part. The
addition of C
is 1nF.
Layout considerations
The Gate pins should be as close to the MOSFET gate as possible. Also the ground return loop
should be as short as possible. The decoupling capacitor should be close to the V
and should be a X7R type. Trace widths should be maximized in the high current path through the
MOSFET and ground return in order to minimize the effects of circuit inductance and resistance.
For best thermal performance, the PCB heat path from pins 5 and 6 needs attention. The area of
copper connected to pins 5 and 6 should be maximised.
Issue 4, May 2009
©Diodes Incorporated 2008
REF
BIAS
= (V
= (V
CC
CC
CC
-0.7V)/ 0.0024
-0.7V)/ 0.0028
BIAS
=10V. This also reduces the IC current consumption when the gate voltage is off.
REF
controls the switch-on delay of the MOSFET, and ensures stability. A suitable value
and R
T
of the controller to ‘-24mV’ at V
BIAS
REF
can be chosen to be equal to set the turn-off threshold voltage V
to give a reference current, I
BIAS
CC
REF
supply voltage to the ZXGD3102 and also to limit the
, of approximately 1.2 times I
and R
9
CC
BIAS
CC
=10V.
and ground due to the possibility of high peak
is important to the optimum device operation.
REF
, of ~2.4mA. The value of R
REF
. This set the turn-off
CC
www.diodes.com
and Ground pin,
ZXGD3102T8
BIAS
T
must
to ‘-

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